期刊论文

Yang, Teng;Han, Zheng;Chen, Yuansen

英文

Nature Nanotechnology

1748-3387

2018

13

7

554-559

10.1038/s41565-018-0186-z

This work was supported by the National Key R&D Program of China (2017YFA0206302) and by the National Natural Science Foundation of China (NSFC; grants 11504385 and 51627801). Z.Z. acknowledges support from the NSFC (grant 51331006) and the CAS (project KJZD-EW-M05-3). T.Y. acknowledges support from the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation, NSFC and CASC (grant U1537204). The work in Shanxi University was supported financially by the NSFC (grant 61574087) and the Fund for Shanxi ‘1331 Project’ Key Subjects Construction (1331KSC). D.S. acknowledges support from the NSFC (grants 51272256, 61422406 and 61574143) and MSTC (grant 2016YFB04001100). S.O. acknowledges support from Grants-in-Aid for Scientific Research (S) (25220604) and LANEF. The authors are grateful for discussions with H. Yuan.

本校为其他机构

Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electric-field tuning has proven challenging 1-4 . Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena 5-13 . However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional materi...