A new method for post-treatment of PS (porous silicon), sulfur passivation by microwave-plasma assistance in vacuum, is reported in this paper. Fourier transform infrared spectrum indicated that the treated sample surface is mainly covered by SiSx and SiOy. Compared with the as-etched PS, the photoluminescence (PL) intensity of the sample is 3.5 times stronger, and the 4 nm blueshift of the PL peak was observed experimentally;furthermore, the intensity decay of the PL peak hasnot been observed after 60 d in the atmosphere. Therefore, sulfur passivation is an effective post-treatment for enhanc...
