State Key Laboratory Surface Physics, Fudan-T. D. Lee Laboratory, Fudan University, Shanghai 200433, China
[Liu, Xiao-Bing; Li, Min-Qian; Liao, Liang-Sheng; Yuan, Shuai; Miao, Xi-Yue; Hou, Xiao-Yuan; He, Jun; Fan, Hong-Lei; Sun, Jie-Lin; Xu, Lei] Department of Physics, Changsha Electric Power University, Changsha 410077, China
Laboratory of Analysis Techniques, Shanghai Inst. of Nuclear Research, Academia Sinica, Shanghai 201800, China
通讯机构：
Department of Physics, Changsha Electric Power University, China
语种：
中文
期刊：
物理学报
ISSN：
1000-3290
年：
1997
卷：
46
期：
8
页码：
1551
机构署名：
本校为通讯机构
院系归属：
物理与电子科学学院
摘要：
AFM and PL are adopted to study the morphological and photoluminescent characteristics of a series of porous silicon (PS) samples etched with direct current and pulsed current. The results of AFM indicate that there are many "hillocks" at the surface of PS samples and the microstructure of PS samples is quite different with different etching modes. The amount of the small Si particles formed by pulsed etching is more than that by direct current etching under the equivalent etching conditions and the particles appear more protruding and sharper by the pulsed etching. Moreover, PL spectra shows ...
