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Unusual Fermi-level pinning and Ohmic contact engineering for Janus TMD heterojunctions from an electronegativity perspective Available to Purchase

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成果类型:
期刊论文
作者:
Qian Liu;Zhen Zhu;Hai-Qing Xie;Zhi-Qiang Fan;Dan Wu;...
通讯作者:
Zhi-Qiang Fan<&wdkj&>Dan Wu<&wdkj&>Ke-Qiu Chen
作者机构:
[Ke-Qiu Chen] Department of Applied Physics, School of Physics and Electronics, Hunan University , Changsha 410082, China
[Qian Liu; Zhen Zhu; Hai-Qing Xie; Zhi-Qiang Fan; Dan Wu] School of Physics and Electronic Science, Changsha University of Science and Technology , Changsha 410114, China
通讯机构:
[Zhi-Qiang Fan; Dan Wu] S
[Ke-Qiu Chen] D
Department of Applied Physics, School of Physics and Electronics, Hunan University , Changsha 410082, China<&wdkj&>School of Physics and Electronic Science, Changsha University of Science and Technology , Changsha 410114, China
语种:
英文
期刊:
Applied Physics Letters
ISSN:
0003-6951
年:
2025
卷:
127
期:
9
页码:
092104
机构署名:
本校为通讯机构
院系归属:
物理与电子科学学院
摘要:
Using density functional theory calculations, we systematically investigated the fat band structures and Schottky barriers of 72 van der Waals heterojunctions (vdWHs) formed by combining 1T-phase transition metal dichalcogenides (TMDs) (MX 2 , M = Mo, W; X = S, Se, Te) with 2H-phase Janus TMDs (MXY, M = Mo, W; X, Y = S, Se, Te). Unlike conventional TMDs, Janus TMDs lack mirror symmetry and exhibit a built-in in-plane dipole due to their asymmetric atomic configuration. A larger electronegativity gradient across the Janus TMDs leads to e...

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