期刊论文

Wu, LJ

英文

Materials Science in Semiconductor Processing

1369-8001

2023

163

107581

10.1016/j.mssp.2023.107581

CRediT authorship contribution statement Lijuan Wu: Writing – review & editing, Supervision, acquisition, Conceptualization. Jiahui Liang: Writing – original draft, Visualization, Investigation, Data curation. Mengyuan Zhang: Visualization, Methodology. Mengjiao Liu: Validation, Methodology. Tengfei Zhang: Validation, Resources, Methodology. Gang Yang: Formal analysis. Xuanting Song: Writing – review & editing, Validation, Methodology.

本校为第一且通讯机构

The high trap density at the SiC/SiO2 interface is still the major reliability issue of silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs). In this paper, we analyse the influence of the channel region and JFET region on the C-V curve from the band perspective. We proposed an approach to extract the oxide interface characteristics of a SiC MOSFET by fitting the measured C-V characteristic curve with the TCAD simulated curve. Then, the extracted SiC/SiO2 interface characteristics were verified by fitting the measured and simulated I-V curves and threshold voltage...