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Ballistic Transport through a Strained Region on Monolayer Phosphorene

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成果类型:
期刊论文
作者:
Ren, Yi;Cheng, Fang*
通讯作者:
Cheng, Fang
作者机构:
[Ren, Yi; Cheng, Fang] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.
通讯机构:
[Cheng, Fang] C
Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.
语种:
英文
期刊:
中国物理快报:英文版
ISSN:
0256-307X
年:
2017
卷:
34
期:
2
页码:
027302
基金类别:
*Supported by the National Natural Science Foundation of China under Grant No 11374002, the Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, and the Construct Program of the Key Discipline in Hunan Province. **Corresponding author. Email: chengfangg@gmail.com © 2017 Chinese Physical Society and IOP Publishing Ltd
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
We investigate quantum transport of carriers through a strained region on monolayer phosphorene theoretically. The electron tunneling is forbidden when the incident angle exceeds a critical value. The critical angles for electrons tunneling through a strain region for different strengths and directions of the strains are different. Owing to the anisotropic effective masses, the conductance shows a strong anisotropic behavior. By tuning the Fermi energy and strain, the channels can be transited from opaque to transparent, which provides us with an efficient way to...

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