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Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In2Se3 Thin Films

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成果类型:
期刊论文
作者:
Meng, Qinghao;Yu, Fan;Liu, Gan;Zong, Junyu;Tian, Qichao;...
通讯作者:
Zhang, Y
作者机构:
[Wang, Kaili; Liu, Gan; Wang, Can; Qiu, Xiaodong; Zhang, Yi; Zong, Junyu; Tian, Qichao; Meng, Qinghao; Xi, Xiaoxiang; Zhang, Y; Yu, Fan] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.
[Wang, Can; Zhang, Yi; Xi, Xiaoxiang; Zhang, Y] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China.
[Wang, Can] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
通讯机构:
[Zhang, Y ] N
Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.
Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China.
语种:
英文
关键词:
In2Se3;electronic structure;surface reconstruction;molecular beam epitaxy;angle-resolved photoemission spectroscopy
期刊:
Nanomaterials
ISSN:
2079-4991
年:
2023
卷:
13
期:
9
页码:
1533-
基金类别:
Conceptualization, Q.M. and Y.Z.; Methodology, Q.M. and Y.Z.; Validation, Q.M. and Y.Z.; Formal Analysis, Q.M. and Y.Z.; Investigation, Q.M., F.Y., G.L., J.Z., Q.T., K.W., X.Q. and C.W.; Data Curation, Q.M., G.L. and Y.Z.; Writing—Original Draft Preparation, Q.M.; Writing—Review and Editing, Y.Z.; Supervision, X.X. and Y.Z.; Project Administration, Y.Z.; Funding Acquisition, Y.Z. All authors have read and agreed to the published version of the manuscript. This research was funded by the National Natural Science Foundation of China, grant number 92165205, the National Key Research and Development Program of China, grant number 2018YFA0306800, the Innovation Program for Quantum Science and Technology of China, grant number 2021ZD0302803, the Program of High-Level Entrepreneurial and Innovative Talents Introduction of Jiangsu Province, China. And The APC was funded by the National Natural Science Foundation of China, grant number 92165205.
机构署名:
本校为其他机构
院系归属:
物理与电子科学学院
摘要:
Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In(2)Se(3) has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β-In(2)Se(3) films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved ...

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