期刊论文、会议论文

Chen, Jiezhi

英文

Journal of Physics D: Applied Physics

0022-3727

2018

51

33

335104

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10.1088/1361-6463/aad2a2

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11674039, 11774338 and 11574304), and the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 15A004). X Jiang greatly acknowledges the support to this work by the Youth Innovation Promotion Association CAS (Grand No. 2016109) and Chinese Academy of Sciences-Peking University Pioneer Cooperation Team (CAS-PKU Pioneer Cooperation Team) J Chen greatly acknowledges the support to this work by China Key Research and Development Program (2016YFA0201802).

本校为第一机构

Two-dimensional (2D) semiconductors present great potential for electronic and optoelectronic applications due to their uniform thickness and tunable band gaps. Using ab initio electronic structure calculations and quantum transport simulations, we demonstrate the asymmetric metal contact design in the case of 2D GeSe, with a systematic study of the interfacial properties and transport properties of three common metal contacts (Ag, Au, and Pd) to the 2D semiconductor. Because of the different work functions, Ag contacted to GeSe forms n-type Sc...