HfO 2 -based ferroelectric films have been extensively explored and utilized in the field of non-volatile memory and electrical programmability. However, the trade-off between ferroelectric polarization and dielectric constant in HfO 2 has limited the overall performance improvement of devices in practical applications. Herein, a novel approach is proposed for the Hf 0.5 Zr 0.5 O 2 /ZrO 2 (HZO/ZrO 2 ) nanobilayer engineering, which can effectively regulate the phase structure evolution of HfO 2 films to construct a suitable morphotropic phase b...
