A novel multi-dimensional accumulation gate (MDAG) lateral double-diffused MOS (LDMOS) with ultra-low specific on-resistance (Ron,sp) is proposed and investigated by simulation. The MDAG LDMOS is composed of the MDAG, the trench source, and the N-Buffer. In the on-state, the bulk electron channels are formed in the P -well and the multi-dimensional electron layers are formed in the drift region. Meanwhile, the trench source shortens the current path length. Thus, the Ron,sp is greatly reduced. In the off-state, the N-Buffer is used to form a PN junction with the P-Substrate to obtain the ideal...
