Carbon;Electronic density of states;Electronic structure;Spectroscopic analysis;Energy graphene approximation;Fermi level;Normalized differential conductivity;Single walled carbon nanotubes;Nanotubes
期刊：
材料科学技术(英文版)
ISSN：
1005-0302
年：
2003
卷：
19
期：
2
页码：
110-112
基金类别：
The work is financially supported by the National Natural Science Foundation of China （No.59972031）and the Scientific Research Fund of Hunan Provincial Education Department （No.01C248）. Authors wish to express their sincere appreciation to these sponsors；
机构署名：
本校为第一且通讯机构
院系归属：
数学与统计学院
摘要：
The analytical expression of the electronic density of states (DOS) for single-walled carbon nanotubes (SWNTs) has been derived on the basis of graphene approximation of the energy E(k) near the Fermi level EF. The distinctive properties of the DOS for SWNTs, the normalized differential conductivity and the current vs bias are deduced and analyzed theoretically. The singularities in the DOS (or in the normalized differential conductivity) predict that the jump structure of current (or conductance)-bias of SWNTs exists. All the conclusions from the theoretical analysis are in good agreement wit...
摘要(中文)：
The analytical expression of the electronic density of states （DOS） for single-walled carbon nanotubes （SWNTs） has been derived on the basis of graphene approximation of the energy E（k） near the Fermi level EF. The distinctive properties of the DOS, the normalized differential conductivity and the current us bias for SWNTs are deduced and analyzed theoretically. The singularities in the DOS （or in the normalized differential conductivity） predict that the jump structure of current （or conductance）-bias of SWNTs exists. All conclusion...
