Ultrathin fluorite nanobilayer films with excellent ferroelectricity for high-density memory applications

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成果类型：

期刊论文

作者：

Lei Liu;Chengfeng Jiang;Xi Yuan;Yan Zhang;Haiyan Chen;...

通讯作者：

Haiyan Chen<&wdkj&>Dou Zhang

作者机构：

[Lei Liu; Yan Zhang; Dou Zhang] State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China

[Xi Yuan] College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China

[Chengfeng Jiang; Haiyan Chen] Key Laboratory of Renewable Energy Electric-Technology of Hunan Province, School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, China

通讯机构：

[Haiyan Chen] K

[Dou Zhang] S

State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China<&wdkj&>Key Laboratory of Renewable Energy Electric-Technology of Hunan Province, School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, China

语种：

英文

期刊：

材料科学技术(英文)

ISSN：

1005-0302

年：

2026

卷：

241

页码：

219-228

DOI：

10.1016/j.jmst.2025.02.097

基金类别：

CRediT authorship contribution statement Lei Liu: Writing – original draft, Visualization, Investigation, Formal analysis, Data curation. Chengfeng Jiang: Visualization, Validation, Investigation. Xi Yuan: Supervision, Software, Resources, Project administration, acquisition. Yan Zhang: Validation, Supervision, Software, Methodology. Haiyan Chen: Writing – review & editing, Supervision, Resources, Project administration, Methodology, Formal analysis, Conceptualization. Dou Zhang: Writing – review & editing, Supervision,

机构署名：

本校为通讯机构

院系归属：

能源与动力工程学院

摘要：

The strategy of nanolaminates has been shown to significantly optimize the electrical properties and reliability of fluorite HfO 2 -ZrO 2 ferroelectric thin films. However, HfO 2 -ZrO 2 nanolaminates typically exhibit low ferroelectric polarization, which severely limits their application in high-performance ferroelectric memory devices. In this work, strong and reliable ferroelectricity in equal thick ZrO 2 /Hf 0.5 Zr 0.5 O 2 (ZO/HZO) nanobilayer films has been successfully achieved using post-deposition annealing (PDA) process. Compared to th...

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Ultrathin fluorite nanobilayer films with excellent ferroelectricity for high-density memory applications

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