A 1200V 4H-SiC lateral double-diffused MOSFETs (LDMOS) with embedded auto-adjust JFET (AD-JEFT) and double-reduced surface fields technology is proposed. The AD-JEFT, as the conduction path of electrons from N+ source to the P-well channel, is embedded in P+ well. In the on-state, as the device is pressurized, the increase of depletion charge will reduce the effective channel width of AD-JFET. As a result, the potential barrier of the AD-JFET channel will increase rapidly, making it difficult for electrons to transfer and resulting in a reduction of the saturation current. Compared with the co...
