The exceptionally high thermal conductivity after \'alloying\' two-dimensional gallium nitride (GaN) and aluminum nitride (AlN) - 成果

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The exceptionally high thermal conductivity after 'alloying' two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

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作者信息关键词期刊信息基础信息归属信息摘要

成果类型：

期刊论文

作者：

Wang, Huimin;Wei, Donghai;Duan, Junfei;Qin, Zhenzhen;Qin, Guangzhao*;...

通讯作者：

Yao, Yagang;Hu, Ming;Qin, Guangzhao

作者机构：

[Wang, Huimin; Yao, Yagang] Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.

[Wang, Huimin; Yao, Yagang] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China.

[Wang, Huimin; Hu, Ming] Univ South Carolina, Dept Mech Engn, Columbia, SC 29208 USA.

[Wang, Huimin; Qin, Guangzhao; Wei, Donghai] Hunan Univ, Coll Mech & Vehicle Engn, State Key Lab Adv Design & Mfg Vehicle Body, Changsha 410082, Peoples R China.

[Wei, Donghai; Duan, Junfei] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410004, Peoples R China.

通讯机构：

[Yao, Yagang] N

[Hu, Ming] U

[Qin, Guangzhao] H

[Yao, Yagang] C

Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.

语种：

英文

关键词：

Alloying;Aluminum alloys;Aluminum nitride;Boltzmann equation;Calculations;Conversion efficiency;Gallium nitride;III-V semiconductors;Knowledge management;Nitrides;Phase space methods;Thermal conductivity of solids;Thermoelectric energy conversion;Aluminum nitride (AlN);Boltzmann transport equation;Electron localization function;First-principles calculation;Gallium nitrides (GaN);High thermal conductivity;Thermal transport properties;Thermoelectric devices;Gallium alloys

期刊：

Nanotechnology

ISSN：

0957-4484

年：

2021

卷：

期：

页码：

135401

DOI：

10.1088/1361-6528/abd20c

基金类别：

This work was supported by the National Key R&D Program of China (No. 2017YFB0406000) and the National Natural Science Foundation of China (Nos. 51906097, 52006057, 11904324, 51972162, 11847158), the China Postdoctoral Science Foundation (2018M642776), and the Fundamental Research Funds for the Central Universities (Grant No. 531118010471). Research reported in this publication was also supported in part by the NSF (award number 1905775) and SC EPSCoR/IDeA Program under NSF OIA-1655740 via SC EPSCoR/IDeA 20-SA05. The numerical calculations in this paper have been done on the supercomputing system of the National Supercomputing Center in Changsha.

机构署名：

本校为其他机构

院系归属：

材料科学与工程学院

摘要：

Alloying is a widely employed approach for tuning properties of materials, especially for thermal conductivity which plays a key role in the working liability of electronic devices and the energy conversion efficiency of thermoelectric devices. Commonly, the thermal conductivity of an alloy is acknowledged to be the smallest compared to the parent materials. However, the findings in this study bring some different points of view on the modulation of thermal transport by alloying. The thermal transport properties of monolayer GaN, AlN, and their...

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The exceptionally high thermal conductivity after 'alloying' two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

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