期刊论文

Fan, Zhi-Qiang;Zhang, Zhen-Hua

英文

Nanoscale

2040-3364

2020

12

42

21750-21756

10.1039/d0nr05269h

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11674039, 12074046 and 61771076), the China Key Research and Development Program (2018YFA0306101), the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 18B157), the Hunan Provincial Natural Science Foundation of China (Grant No. 2020JJ4597), and the Open Research Fund of Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering (Grant No. 201904).

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Using ab initio quantum-transport simulations, we studied the intrinsic transfer characteristics and benchmarks of the ballistic performance of 5.1 nm double-gated Schottky-barrier field effect transistors (SBFETs) consisting of in-plane (IP) heterojunctions of metallic-phase (1T or 1T′) MTe2 (M = Ti, Zr, Hf, Cr, Mo, W) and semiconducting-phase (2H) WSe2, WTe2 and Janus WSeTe. The 2H-phase Janus WSeTe is a semiconductor with an indirect bandgap (1.26 eV), which is less than the bandgap of 2H-phase WSe2 (1.64 eV) and is greater than the bandgap...