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Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons

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成果类型:
期刊论文
作者:
Su, ShaoLong;Gong, Jian*;Fan, Zhi-Qiang*
通讯作者:
Gong, Jian;Fan, Zhi-Qiang
作者机构:
[Gong, Jian; Su, ShaoLong] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.
[Fan, Zhi-Qiang] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
通讯机构:
[Gong, Jian] I
[Fan, Zhi-Qiang] C
Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
语种:
英文
期刊:
RSC Advances
ISSN:
2046-2069
年:
2018
卷:
8
期:
55
页码:
31255-31260
基金类别:
National Natural Science Foundation of China [11464032, 11674039]; Hunan Provincial Education Department [15A004]
机构署名:
本校为通讯机构
院系归属:
物理与电子科学学院
摘要:
Using first principles density functional theory, we perform a systematic study of the band structures of passivated zigzag phosphorene nanoribbons (ZPNRs) and the transport properties of in-plane metal-semiconductor junctions. It is found that the ZPNR passivated by H, Cl or F atoms is a semiconductor, and the ZPNR passivated by C, O or S atoms is a metal. Therefore, ZPNRs with different passivated atoms can be fabricated into an in-plane metal-semiconductor junction. The calculated current-voltage characteristics indicate that these in-plane ...

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