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Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation

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成果类型:
期刊论文
作者:
Li, GB*;Liao, LS;Liu, XB;Hou, XY;Wang, X
通讯作者:
Li, GB
作者机构:
FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
SICHUAN INST TECHNOL,PHYS LAB,CHENGDU 611744,SICHUAN,PEOPLES R CHINA.
CHANGSHA ELECT POWER UNIV,DEPT PHYS,CHANGSHA 410077,HUNAN,PEOPLES R CHINA.
[Li, GB] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
通讯机构:
[Li, GB] F
FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
语种:
英文
关键词:
rapid thermal processing, oxidation, photoluminescence, dangling bonds, elemental semiconductors, silicon, porous materials, spectral line shift, catalysis
期刊:
Applied Physics Letters
ISSN:
0003-6951
年:
1997
卷:
70
期:
10
页码:
1284-1286
机构署名:
本校为其他机构
院系归属:
物理与电子科学学院
摘要:
Porous silicon treated by amine immersion and then rapid thermal oxidation results in a photoluminescence peak shift from ∼650 nm (red light) to a stable and intense ∼520 nm blue-green light. The amine immersion may catalyze a process during rapid thermal oxidation that both reduces the sizes of Si cores and more effectively saturates the dangling bonds on the inner surfaces of the porous...

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