The analytical model of high -k SOI pLDMOS (HK SOI pLDMOS) with adaptive polarization charges is proposed in this paper. The HK SOI pLDMOS structure features a HK dielectric trench, which can introduce polarization charges to keep inner self-charge balance with the ions in the drift region and the carriers in the substrate. The HK trench assists the depletion in drift region to decreased the special on-resistance (RON,sp). In order to further modulate the electric field and reduce the RON,sp, a back gate is planted in the substrate. The analytical model of potential and the surface electric fi...
