版权说明 操作指南
首页 > 成果 > 详情

Electronic properties of phosphorene nanoribbons with nanoholes

认领
导出
下载 Link by DOI
反馈
分享
QQ微信 微博
成果类型:
期刊论文
作者:
Sun, Lin;Zhang, Zhen Hua;Wang, Hao*;Li, Mo*
通讯作者:
Li, Mo;Wang, Hao
作者机构:
[Sun, Lin; Li, Mo] Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.
[Zhang, Zhen Hua; Sun, Lin] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
[Sun, Lin] Changsha Univ Sci & Technol, Hunan Prov Higher Educ Key Lab Modeling & Monitor, Changsha 410114, Hunan, Peoples R China.
[Wang, Hao] Shenzhen Univ, Coll Mechatron & Control Engn, Guangdong Prov Key Lab Micro Nano Optomechatron E, Shenzhen 518060, Peoples R China.
[Li, Mo] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA.
通讯机构:
[Li, Mo] C
[Wang, Hao] S
[Li, Mo] G
Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.
Shenzhen Univ, Coll Mechatron & Control Engn, Guangdong Prov Key Lab Micro Nano Optomechatron E, Shenzhen 518060, Peoples R China.
语种:
英文
期刊:
RSC Advances
ISSN:
2046-2069
年:
2018
卷:
8
期:
14
页码:
7486-7493
基金类别:
National Natural Science Foundation of China [61371065, 51771123]; Hunan Provincial Natural Science Foundation of China [2015JJ3002]; Scientific Research Fund of Hunan Provincial Education Department [17C0030]; Guangdong Provincial Natural Science Foundation of China [2015A030313543]; Open Research Fund of the Hunan Province Higher Education Key Laboratory of Modeling and Monitoring on the Near-Earth Electromagnetic Environments [20160106]; Changsha University of Science Technology; National Thousands Talent Program of China; State Key Laboratory for Powder Metallurgy of the Central South University
机构署名:
本校为其他机构
院系归属:
物理与电子科学学院
摘要:
Using first-principles calculation based on density-functional theory, the electronic properties of monolayer black phosphorus nanoribbons (PNRs) with and without punched nanoholes (PNRPNHs) and their mechanical stability are studied systematically. We show that while the perfect PNRs and the PNRPNHs have similar properties as semiconductors in both armchair-edge PNR and zigzag-edge PNR structures, the nanoholes can lead to changes in the electronic structure: the zigzag-edge PNRPNH undergoes a direct-to-indirect bandgap transition while the armchair-edge PNRPNH still retains a direct bandgap ...

反馈

验证码:
看不清楚,换一个
确定
取消

成果认领

标题:
用户 作者 通讯作者
请选择
请选择
确定
取消

提示

该栏目需要登录且有访问权限才可以访问

如果您有访问权限,请直接 登录访问

如果您没有访问权限,请联系管理员申请开通

管理员联系邮箱:yun@hnwdkj.com