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Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

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成果类型:
期刊论文
作者:
Zhao, Dongsheng;He, Liang;Wu, Lijuan;Xiao, Qingzhong;Liu, Chang;...
通讯作者:
Wu, LJ;He, L
作者机构:
[Wu, LJ; Wu, Lijuan; Zhao, Dongsheng; Yang, Deqiang] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
[Cheng, Zijun; He, Liang; Chen, Yuan; Lv, Mingen; Zhao, Dongsheng; Xiao, Qingzhong; He, Zhiyuan; Liu, Chang] Minist Ind & Informat Technol, Elect Res Inst 5, Key Lab, Guangzhou 510610, Peoples R China.
通讯机构:
[Wu, LJ ] C
[He, L ] M
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
Minist Ind & Informat Technol, Elect Res Inst 5, Key Lab, Guangzhou 510610, Peoples R China.
语种:
英文
关键词:
SiNx;AlGaN/GaN HEMT;hydrogen;interface trap;border trap
期刊:
Micromachines
ISSN:
2072-666X
年:
2024
卷:
15
期:
2
页码:
171-
基金类别:
Conceptualization, D.Z. and Q.X.; methodology, D.Z., L.H. and C.L.; validation, D.Z., C.L. and Y.C.; formal analysis, D.Z. and. D.Y; investigation, Y.C. and Z.H.; resources, C.L. and Z.H.; data curation, L.W. and Z.C.; writing—original draft preparation, D.Z., L.W. and L.H.; writing—review and editing, D.Z., L.W. and Y.C.; visualization, Q.X. and M.L.; supervision, Q.X. and Z.C.; project administration, D.Y. and M.L.; funding acquisition, L.H. All authors have read and agreed to the published version of the manuscript. This research was supported by Guangzhou Basic and Applied Basic Research Project under Grant No. 202201010923 and 202201010868; the National Natural Science Foundation of China (NSFC) under Grant No. 52107184, 62374045, and 62274043; the National Key R&D Program of China under Grant No. 2021YFB3602300; and the Natural Science Foundation of Guangdong Province under Grant No. 2022A1515012127. The main work of this study was completed at the Key Laboratory of the Fifth Research Institute of the Ministry of Industry and Information Technology.
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiNx gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the threshold voltage V-TH of the original device was positively shifted from -16.98 V to -11.53 V, and the positive bias of threshold was 5.45 V. When the VDS was swept from 0 to 1 V with VGS of 0 V, the IDS was reduced by 25% from 9.45 A to 7.08 A. (2) Another group of original devices with identical electrical p...

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