The performance of monolayer two-dimensional SiC MOSFET with various concentration of ptype doping in source/drain region and various lengths of channel were investigated based on the density-functional theory method. All MOSFETs could realize dynamic turn-off. The maximum ON-state current were up to 1152.8 mu A/mu m and 1731.4 mu A/mu m for 4.1 nm and 5.1 nm SiC MOSFET with 5 x 1020 cm-2 doping concentration, respectively, which could satisfy the requirement of the high-performance devices outlined by ITRS for production year 2028. In addition, the various parameters (transmission spectra, th...
