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Electronic structures and Mott state of epitaxial TaS2 monolayers

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成果类型:
期刊论文
作者:
Qichao Tian;Chi Ding;Xiaodong Qiu;Qinghao Meng;Kaili Wang;...
通讯作者:
Yi Zhang
作者机构:
[Qichao Tian; Chi Ding; Xiaodong Qiu; Qinghao Meng; Kaili Wang; Fan Yu; Yuyang Mu] National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing, China
School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha, China
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Hefei National Laboratory, Hefei, China
[Can Wang] National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing, China<&wdkj&>School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha, China
通讯机构:
[Yi Zhang] N
National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing, China<&wdkj&>Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China<&wdkj&>Hefei National Laboratory, Hefei, China
语种:
英文
期刊:
中国科学:物理学、力学、天文学英文版
ISSN:
1674-7348
年:
2024
卷:
67
期:
5
页码:
1-7
机构署名:
本校为其他机构
院系归属:
物理与电子科学学院
摘要:
Layered material TaS2 hosts multiple structural phases and exotic correlated quantum states, including charge density wave (CDW), superconductivity, quantum spin liquid, and Mott insulating state. Here, we synthesized TaS2 monolayers in H and T phases using the molecular beam epitaxial (MBE) method and studied their electronic structures via angle-resolved photo-emission spectroscopy (ARPES). We found that the H phase TaS2 (H-TaS2) monolayer is metallic, with an energy band crossing the Fermi level. In contrast, the T phase TaS2 (T-TaS2) monolayer shows an insulated energy gap at the Fermi lev...

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