Frequency characteristics in lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE) were studied by physical models and numerical simulation. In LPIN PD-GTE, due to vertically depletion in thin film by gate voltage, wider lateral depleted region and shorter transmit time were obtained than that in lateral PIN photodiode (LPIN PD) with the same parameters. Physical models and analysis for -3dB frequency, fT were presented and validated by ATLAS. Results indicate that the fT of LPIN PD-GTE at VGK = 0.6 V (fT = 30 MHz) is higher than that of LPIN PD (fT = 3 MHz) under the same parame...
