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Large negative differential resistance effect induced by boron-doping in zigzag phagraphene nanoribbon junctions

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成果类型:
期刊论文
作者:
He, Jun;Zhang, Lifu*;Fan, Zhi-Qiang;Fan, Dianyuan
通讯作者:
Zhang, Lifu
作者机构:
[Fan, Dianyuan; Zhang, Lifu; He, Jun] Shenzhen Univ, Coll Optoelect Engn, Int Collaborat Lab Mat Optoelect Sci & Technol 2D, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China.
[He, Jun] Hunan Univ Technol, Sch Sci, Zhuzhou 412008, Peoples R China.
[Fan, Zhi-Qiang] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
通讯机构:
[Zhang, Lifu] S
Shenzhen Univ, Coll Optoelect Engn, Int Collaborat Lab Mat Optoelect Sci & Technol 2D, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China.
语种:
英文
期刊:
AIP Advances
ISSN:
2158-3226
年:
2018
卷:
8
期:
9
页码:
095006
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61401153, 11604094]; Hunan Provincial Natural Science Foundation of ChinaNatural Science Foundation of Hunan Province [14JJ3126, 2015JJ2050]; Scientific Research Fund of Hunan Provincial Education Department of ChinaHunan Provincial Education Department [14C0347]; Natural Science Foundation of SZU [000053]; Educational Commission of Guangdong Province [2016KCXTD006]
机构署名:
本校为其他机构
院系归属:
物理与电子科学学院
摘要:
By applying nonequilibrium Green's function in combination with the density-functional theory, we investigate the electronic transport properties of boron or nitrogen doped zigzag phagraphene nanoribbon junctions. Our calculated results show that the negative differential resistance effect could be observed in zigzag phagraphene nanoribbon junction. Moreover, the peak to valley ratio of the negative differential resistance significantly increase from 1.6 to 111.32, when the junction is doped by boron atoms. We rationalize the mechanism leading ...

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