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The effects of external electric field and additional strain on electronic and magnetic properties of CrI3/SnC heterostructure

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成果类型:
期刊论文
作者:
Jing, Q.;Deng, X. Q.;Zhang, Z. H.
通讯作者:
Deng, XQ
作者机构:
[Jing, Q.; Deng, X. Q.; Zhang, Z. H.] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410114, Peoples R China.
通讯机构:
[Deng, XQ ] C
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410114, Peoples R China.
语种:
英文
关键词:
CrI3/SnC heterostructure;Electronic structure;Curie temperature;First-principles
期刊:
Physica E-Low-Dimensional Systems & Nanostructures
ISSN:
1386-9477
年:
2023
卷:
153
页码:
115774
基金类别:
National Natural Science Foundation of China [51604042, 2021JJ30733]; Hunan Provincial ???????Natural Science Foundation of China [CX20210828]; Hunan Provincial Innovation Foundation for Postgraduate [202008]; Open Research Fund of Human Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering [202013]; [61771076]
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
The electronic properties of CrI3/SnC heterostructure are investigated by the first-principles method. The Curie temperature (Tc) of CrI3/SnC heterostructure (57.1 K) is higher than that of monolayer CrI3 (similar to 45 K) significantly, and the nonmagnetic SnC monolayer is also magnetized. CrI3/SnC heterostructure shows an intrinsic type-II band alignment with the band gap (Eg) of 0.34 eV, which facilitates the separation of photogenerated electrons and holes in photoelectric devices. Applying strain and electric field (Eext) can effectively tune the electronic properties of the heterostructu...

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