Fully spin-polarized current and pure spin current induced by photogalvanic effect in the 2D half-metal YSi2N4

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成果类型：

期刊论文

作者：

Yin, Jiali;Yan, Pinglan;Fu, Zhentao*;Li, Zhenqing;Qi, Zhixiong;...

通讯作者：

Li, J;Fu, Zhentao;Fu, ZT;Li, ZQ

作者机构：

[Yin, Jiali; Yan, Pinglan; Qi, Zhixiong; Li, Jin] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China.

[Yin, Jiali; Yan, Pinglan; Qi, Zhixiong; Fu, Zhentao; Zhong, Jianxin; Li, Jin; Tang, Chao] Hunan Prov Key Lab Computat Condensed Matter Sci &, Xiangtan 411105, Hunan, Peoples R China.

[Fu, Zhentao; Zhong, Jianxin; Tang, Chao] Shanghai Univ, Inst Quantum Sci & Technol IQST, Shanghai 200444, Peoples R China.

[Fu, Zhentao; Zhong, Jianxin; Tang, Chao] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China.

[Li, Zhenqing] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha, Peoples R China.

通讯机构：

[Fu, ZT ] S

[Fu, ZT] H

[Li, ZQ ] C

[Li, J ] X

Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China.

语种：

英文

期刊：

Applied Physics Letters

ISSN：

0003-6951

年：

2025

卷：

127

期：

页码：

052404

DOI：

10.1063/5.0281547

基金类别：

Science Fund for Distinguished Young Scholars of Hunan Province10.13039/501100019092 [52372260, 12374046, 12204397]; National Natural Science Foundation of China [2022RC1197]; Youth Science and Technology Talent Project of Hunan Province [20B582, 20K127, 20A503, 23A0102]; Scientific Research Foundation of Education Bureau of Hunan Province [2021JJ10036, 2024JJ2048]; Science Fund for Distinguished Young Scholars of Hunan Province of China [2022JJ30554]; Natural Science Foundation of Hunan Province

机构署名：

本校为通讯机构

院系归属：

物理与电子科学学院

摘要：

Compared with traditional electronic devices, spintronic devices offer the benefits of lower power consumption, faster transmission speeds, and higher integration densities. Therefore, seeking a direct and efficient method to flexibly generate spin currents in a single device, especially fully spin-polarized current (FSPC) and pure spin current (PSC), remains crucial. Inspired by this, we design a spin optoelectronic device based on the half-metal YSi 2 N 4 , and investigate its transport behavior influenced by photogalvanic effects. Remarkably...

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Fully spin-polarized current and pure spin current induced by photogalvanic effect in the 2D half-metal YSi2N4

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