A superjunction (SJ) insulated gate bipolar transistor (IGBT) featuring an embedded self-biased (ESB) n-type metal-oxide-semiconductor field-effect transistor (NMOS) between the P-pillar and the emitter is proposed and simulated. During the on-state, the NMOS is turned off to maintain high conductivity modulation, achieving a relatively low on-state voltage (V-on). The P-pillar is connected to the emitter through the NMOS in the blocking state, which prevents premature breakdown at the corner of the trench gate. Consequently, a high breakdown voltage (BV) is ensured. During the turn-off period...
