期刊论文

中文

电瓷避雷器

1003-8337

2007

4

24-27

10.3969/j.issn.1003-8337.2007.04.007

本校为其他机构

研究了在ZnO-Bi2O3-Sb2O3系ZnO电阻片中添加少量硼酸和掺杂0.2%～0.8%（摩尔分数）的氧化钇（Y2O3）,其显微结构和电性能的变化情况。结果表明,随Y2O3掺杂量的增加,ZnO压敏电阻片的电位梯度从210V/mm提高到422.5V/mm;当掺杂量为0.6%（摩尔分数）时,电性能达到最佳,即残压比最小,为1.12;漏电流最小,为353.0μA。掺杂Y2O3使ZnO晶粒周围除了形成Zn7Sb2O12尖晶石外,还形成了具有细微颗粒的含钇相（Zn-Sb-Y-O）和含铋相（Bi-Sb-O）,尖晶石相、含钇相和含铋相的同时存在更加有效地抑制了ZnO晶粒的长大。添加硼酸和增加含钇相在很大程度上改善了ZnO电阻片的电性能。

The microstructural and electrical characteristics of ZnO-Bi2O3-Sb2O3 based varistor ceramics doped with a small quantity of boric acid and various amount of Y2O3 in the range from 0.2% to 0.8%（mole fraction） have been investigated. As the amount of Y2O3 increased, the threshold voltage of the ceramics increased from 210 V/mm to 422.5 V/mm. When the amount of Y2O3 increased to 0.6 %, the ZnO varistor achieved the optimum electrical characteristics, i.e., the minium voltage ratio 1.12 and the minium leakage current 353.0 μA. Besides Zn7Sb2Oi2...