期刊论文

Wu, L.

英文

IEEE Transactions On Electron Devices

0018-9383

2023

70

2

647-652

10.1109/TED.2022.3231808

10.13039/501100004735-Hunan Provincial Natural Science Foundation of China (Grant Number: 2021JJ30738) 10.13039/100009377-Scientific Research Fund of Hunan Provincial Education Department (Grant Number: 19K001) Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering's Open Fund Project-2020 (Grant Number: 202016)

本校为第一机构

A 15-kV-scale 4H-SiC insulated-gate bipolar transistor (IGBT) with a self-biased split-gate pMOS (SGPMOS) is proposed and simulated in this work. By introducing the SGPMOS, the proposed IGBT forms a hole barrier in the ON-state and a hole extraction path during the turn-on and turn-off transient, respectively. Compared to GS IGBT, the ON-state voltage ( ${V}_{\text {ON}}{)}$ of the SGPMOS IGBT is decreased by 54.95% for the same turn-off loss ( ${E}_{\text {off}}$ ). Meanwhile, compared with pMOS IGBT, the ${C}$ – ${V}$ and gate charge ( ${Q}_...