With the increase of integration, the smaller the scale of FETs, the performance of silicon-based FETs will be limited, and two-dimensional FETs will become inevitable. In this paper, the transfer characteristics and performances of 5.1 nm, 6.1 nm 1 T/2H/1 T MoTe 2 and WSe 2 single-layer dual-gate Schottky barrier field effect transistor (D-SBFET) were discussed, and it was found that only the ON-state current of 6.1 nm MoTe 2 -D-SBFET met the ON-state current requirement of ITRS, and the others were all lower than ITRS requirement. In ord...
