期刊论文

Wu, LJ

英文

Micromachines

2072-666X

2023

14

5

1061-

10.3390/mi14051061

Methodology, L.W. and M.Z.; software, M.Z. and J.L.; validation, L.W.; formal analysis, M.L. and L.W.; investigation, L.W.; resources, L.W., M.Z. and J.L.; data curation, G.Y. and T.Z.; writing—original draft preparation, M.Z.; writing—review and editing, L.W. and M.Z.; visualization, M.Z.; supervision, L.W.; project administration, L.W.; funding acquisition, L.W. All authors have read and agreed to the published version of the manuscript. This work was supported in part by the Hunan Provincial Natural Science Foundation of China under Grant 2021JJ30738.

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In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability. A numerical simulation verifies that a lower barrier for electrons appears because of the LBD; thus, a path that makes it easier for electrons to transfer from the N+ source to the drift region is provided, finally eliminating the bipolar degradation of the body diode. At the same time, the LBD integrate...