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The effect of negative differential resistance in black phosphorene nanoribbons with different passivated atoms

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成果类型:
期刊论文
作者:
Hu, Xunwu;Cheng, Fang*
通讯作者:
Cheng, Fang
作者机构:
[Hu, Xunwu; Cheng, Fang] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.
通讯机构:
[Cheng, Fang] C
Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.
语种:
英文
期刊:
Physica E-Low-Dimensional Systems & Nanostructures
ISSN:
1386-9477
年:
2019
卷:
110
页码:
20-23
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11374002]; Scientific Research Fund of Hunan Provincial Education DepartmentHunan Provincial Education Department [17A001]; Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changchun University of Science and Technology, Changsha, China
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
Based on the first-principles calculations and the non-equilibrium Green's function method, we theoretically investigate the transport property of zigzag phosphorene nanoribbons (ZPNRs) passivated with different atoms, such as N, C, N, O, H. We found that the O-passivated ZPNR is the most stable structure. ZPNRs can be semiconductor and metallic phases, depending sensitively on the passivated atoms at the edges of the ZPNRs. We find that the system can be a metal/semiconductor junction, displaying a pronounced negative differential resistance with a large peak-to-valley under a bias. This feat...

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