National Natural Science Foundation of China [52130704]; Scientific Research Fund of Hunan Provincial Education Department [20B029]
机构署名：
本校为其他机构
院系归属：
电气与信息工程学院
摘要：
Hybrid switches, e.g., configured by parallel connection of Si IGBT and SiC MOSFET, have been approved to be an optimal solution, which can reduce cost and meanwhile increase the efficiency. The latest generation SiC FETs of UnitedSiC are becoming increasingly popular. Apart from the low on-resistance and good switching performances, main benefits of SiC FETs are the gate drive voltage consistent with the traditional Si IGBTs and avoiding the gate oxygen layer reliability trap, which is existed in the SiC MOSFET. Therefore, this paper proposes a SiC FET/Si IGBT hybrid switch. Both the dynamic ...
