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Lateral Separate Absorption Multibuffer Multiplication Avalanche Photodiode Based on SOI Film

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成果类型:
期刊论文
作者:
Xie, Hai-Qing*;Peng, Yong-Da;Li, Jie-Ying;Wu, Li-Juan
通讯作者:
Xie, Hai-Qing
作者机构:
[Wu, Li-Juan; Xie, Hai-Qing; Li, Jie-Ying; Peng, Yong-Da] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
[Xie, Hai-Qing] Changsha Univ Sci & Technol, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410114, Hunan, Peoples R China.
通讯机构:
[Xie, Hai-Qing] C
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
语种:
英文
关键词:
Avalanche photodiode;multibuffer;separate absorption multiplication;SOI
期刊:
IEEE Transactions On Electron Devices
ISSN:
0018-9383
年:
2019
卷:
66
期:
7
页码:
3003-3006
基金类别:
Manuscript received March 5, 2019; revised April 17, 2019; accepted April 29, 2019. Date of publication May 17, 2019; date of current version June 19, 2019. This work was supported in part by the National Natural Science Foundation of China under Grant 61404011, in part by the Natural Science Foundation of Hunan Province under Grant 2015JJ3001, and in part by the Scientific Research Fund of Hunan Provincial Education Department under Grant 17B007. The review of this paper was arranged by Editor C. Surya. (Corresponding author: Hai–Qing Xie.) H.–Q. Xie is with the School of Physics and Electronic Science, Chang-sha University of Science and Technology, Changsha 410114, China, and also with the Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China (e–mail: xiehq@csust.edu.cn).
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
A lateral separate absorption multibuffer multiplication (LSAMBM) avalanche photodiode based on SOI film was proposed. The LSAMBM structure could nearly eliminate the edge breakdown induced by the curvature effect to improve the stability of the device, and effectively solve the conflict between the sensitive area and the junction capacitance. The step doping multibuffer could reduce the strength of the reverse electric field between absorption region and multiplication region to achieve larger strength of the electric field in the absorption r...

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