Quantum-efficiency;LPIN PD-GTE;Physical models;Silicon on insulator
期刊：
Optoelectronics and Advanced Materials-Rapid Communications
ISSN：
1842-6573
年：
2014
卷：
8
期：
1-2
页码：
77-82
基金类别：
Scientific Research Fund of Hunan Provincial Education DepartmentHunan Provincial Education Department [12C0043]; construct program of key discipline in Hunan province; Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
机构署名：
本校为第一且通讯机构
院系归属：
物理与电子科学学院
摘要：
Due to depleted region but not inversion region formed by the gate voltage (VGK) in thin film and ITO film with transmittancea above 80% at λ ≥ 400nm adopted as transparent electrode, high quantum efficiency (QE) could be achieved in SOI film lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE). Physical models for and analysis for quantum efficiency in LPIN PD-GTE were both presented and validated by ATLAS. Quantum efficiency versus the intrinsic length was also discussed. Results indicated that the QE decreased along with the...
