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Impact of Gate-Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor

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成果类型:
期刊论文
作者:
Xie, Hai-Qing;Li, Jie-Ying;Liu, Gang;Cai, Xi-Ya;Fan, Zhi-Qiang*
通讯作者:
Fan, Zhi-Qiang
作者机构:
[Xie, Hai-Qing; Fan, Zhi-Qiang] Changsha Univ Sci & Technol, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
[Liu, Gang; Cai, Xi-Ya; Li, Jie-Ying] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
通讯机构:
[Fan, Zhi-Qiang] C
Changsha Univ Sci & Technol, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Sch Phys & Elect Sci, Changsha 410114, Peoples R China.
语种:
英文
关键词:
Logic gates;Silicon carbide;Performance evaluation;Electrodes;MOSFET;Photonic band gap;Density functional theory (DFT);field-effect transistor (FET);quantum transport;Schottky barrier;SiC
期刊:
IEEE Transactions On Electron Devices
ISSN:
0018-9383
年:
2020
卷:
67
期:
10
页码:
4130-4135
基金类别:
Manuscript received July 11, 2020; revised August 10, 2020; accepted August 12, 2020. Date of publication August 31, 2020; date of current version September 22, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61404011 and Grant 11674039, in part by the Key Projects of Changsha Science and Technology Plan under Grant kq1901102, in part by the Scientific Research Fund of Hunan Provincial Education Department under Grant 17B007 and Grant 18B157, and in part by the Open Research Fund of Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering under Grant 201904 and Grant 201906. The review of this article was arranged by Editor T. Kimoto. (Corresponding author: Zhi-Qiang Fan.) Hai-Qing Xie and Zhi-Qiang Fan are with the Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China (e-mail: xiehq@csust.edu.cn; zqfan@csust.edu.cn).
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
Schottky-barrier field-effect transistors (SBF-ETs) based on 2-D semiconductors had been investigated as a substitute for a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) based on bulk silicon in the field of high-performance (HP) device. Especially, the monolayer SiC has been studied because it has a large band gap, which results in reducing the short-channel effect. In this article, the gate-source/drain underlap-dependent characteristics of HP SBFETs based on monolayer SiC with 5.1-and 4.6-nm gate lengths are investi...

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