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Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates

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成果类型:
期刊论文
作者:
Gong, Li*;Liu, Yun-Zhen;Liu, Fang-Yang;Jiang, Liang-Xing*
通讯作者:
Gong, Li;Jiang, Liang-Xing
作者机构:
[Gong, Li; Liu, Yun-Zhen] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.
[Gong, Li] Changsha Univ Sci Sr Technol, Hunan Prov Engn Res Ctr, Elect Transportat & Smart Distribut Network, Changsha 410114, Hunan, Peoples R China.
[Jiang, Liang-Xing; Liu, Fang-Yang] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
通讯机构:
[Gong, Li; Jiang, Liang-Xing] C
Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.
Changsha Univ Sci Sr Technol, Hunan Prov Engn Res Ctr, Elect Transportat & Smart Distribut Network, Changsha 410114, Hunan, Peoples R China.
Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
语种:
英文
关键词:
Residual Stress;Transparent Conductive Film;Chemical Spray Pyrolysis;Transparent Conductive Oxide Material;Transparent Conductive Oxide Thin Film
期刊:
Journal of Materials Science: Materials in Electronics
ISSN:
0957-4522
年:
2017
卷:
28
期:
8
页码:
6093-6098
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51302021]; Scientific Research Fund of Hunan Provincial Education DepartmentHunan Provincial Education Department [13C1025]; Hunan provincial Engineering Research Center of Electric transportation and smart distribution network (Changsha University of Science Technology)
机构署名:
本校为第一且通讯机构
院系归属:
电气与信息工程学院
材料科学与工程学院
摘要:
Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest ...

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