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Optical and Electronic Properties of Ni-Doped ZnS: First-Principles Study

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成果类型:
期刊论文
作者:
Xie, Hai-Qing*;Tang, Li-Jun;Tang, Jun-Long;Peng, Ping
通讯作者:
Xie, Hai-Qing
作者机构:
[Tang, Jun-Long; Xie, Hai-Qing; Tang, Li-Jun] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410004, Peoples R China.
[Peng, Ping] Hunan Univ, Coll Mat & Engn, Changsha 410082, Hunan, Peoples R China.
通讯机构:
[Xie, Hai-Qing] C
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410004, Peoples R China.
语种:
英文
关键词:
Ni-Doped ZnS;Optical Properties;Electronic Properties;First-Principles Calculations
期刊:
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
ISSN:
1555-130X
年:
2013
卷:
8
期:
3
页码:
297-301
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11004018]; Scientific Research Fund of Hunan Provincial Education DepartmentHunan Provincial Education Department [12C0043]; construct program of the key discipline in Hunan province; Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
A systematic investigation on electronic and optical properties of pure ZnS and Ni-doped ZnS with different doping levels was performed by using the first principle plane-wave pseudo potential method. Calculation results showed that the density of states near Fermi energy level were dominated by Ni orbits in Ni-doped ZnS systems. Subsequently, narrower band gap was obtained for Ni-doped ZnS with higher doping level. Moreover, with increasing Ni-doping level, the decrease of absorption coefficient and red shift of absorption spectra were observed in Ni-doped ZnS. In addition, a new peak of opti...

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