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Electronic structures and transport properties of armchair graphene nanoribbons by ordered doping

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成果类型:
期刊论文
作者:
Liu, J.;Zhang, Z. H.*;Deng, X. Q.;Fan, Z. Q.;Tang, G. P.
通讯作者:
Zhang, Z. H.
作者机构:
[Tang, G. P.; Fan, Z. Q.; Zhang, Z. H.; Liu, J.; Deng, X. Q.] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
通讯机构:
[Zhang, Z. H.] C
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China.
语种:
英文
关键词:
Atoms;Crystal atomic structure;Electron transport properties;Electronic structure;Energy gap;Molecules;Nanoribbons;Semiconductor doping;Transport properties;Armchair graphene nanoribbons;Atom-projected density;Doping positions;First principles method;Graphene nanoribbons;Impurity atoms;N-doped;n-Type doping;Graphene
期刊:
Organic Electronics
ISSN:
1566-1199
年:
2015
卷:
18
页码:
135-142
基金类别:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 61371065 , 61101009 , 61201080 , and 51302022 ), the Construct Program of the Key Discipline in Hunan Province , Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province , the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 12A001 ), and Hunan Provincial Natural Science Foundation of China (Project No. 14JJ2076).
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子科学学院
摘要:
Based on the first-principles method, the electronic structures and transport properties of armchair graphene nanoribbons (AGNRs) with ordered doping of B atoms or N atoms or BN molecules are studied systematically. It shows that the AGNRs may be a metal or a semiconductor depending on B or N atom-doping positions, and the calculated atom-projected density of states (atom-PDOS) indicates that B or N impurity atoms can induce the new lowest conduction band (LCB) or the highest valence band (HVB). More interestingly, as compared with the intrinsi...

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