We investigate the Goos-Hänchen(GH) shift for ballistic electrons (i) reflected from a step-like inhomogeneity of strain, and (ii) transmitted through a monolayer phosphoresce junction consisting of a positive strained region and two normal regions (or a normal region and two negative strained regions). Refraction occurs at the interface between the unstrained/positive-strain(negative-strain/unstrained), in analogy with optical refraction. The critical angle is different for different strengths and directions of the strains. The critical angles for electrons tunneling through unstrained/p...
