期刊：
IEEE Open Journal of Antennas and Propagation,2022年3:722-731 ISSN：2637-6431
通讯作者：
Xu, K.-D.;Bian, L.-A.
作者机构：
Changsha University Of Science And Technology, School Of Physics And Electronic Science, Changsha, 410114, China;Changsha University Of Science And Technology, Hunan Prov. Higher Educ. Key Lab. Of Modeling And Monitoring On The Near-Earth Electromagnetic Environments, Changsha, 410114, China;Xi'an Jiaotong University, School Of Information And Communications Engineering, Xi'an, 710049, China;East China Normal University, State Key Laboratory Of Precision Spectroscopy, Shanghai, 200241, China;[Yu Liu; Li-An Bian; Kaicheng Huang; Yaokun Wang; Yanxiu Li; Shu Xie] School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha, China<&wdkj&>Hunan Province Higher Education Key Laboratory of Modeling and Monitoring on the Near-Earth Electromagnetic Environments, Changsha University of Science and Technology, Changsha, China
通讯机构：
[Bian, L.-A.] C;[Xu, K.-D.] X;Xi'an Jiaotong University, China;Changsha University Of Science And Technology, China
摘要：
The pattern reconfigurable antenna provides a new implementation scheme for expanding application in modern wireless communications. In this paper, a pattern-reversal wideband microstrip antenna is proposed. This antenna is composed of a radiation patch with attached rectangular metal rings connected by a microstrip line on the upper layer and a four-defects ground plane connecting two PINdiodes- loaded L-shaped stubs on the bottom layer. In view of the Yagi-antenna feature of metal rings and L-shaped stubs, the ON-OFF of diodes controls directly the radiation direction of antenna. Under the joint action of multiple resonances of rings, slots and stubs, the bandwidth of antenna is surged so as to develop evident wideband radiation. Finally, the measured impedance bandwidth of −10 dB is about 20.1% from 4.54 to 5.55 GHz. The average gain of the antenna with the size of $0.75 \lambda_{0} \times 0.75 \lambda_{0}$ reaches 4.92 dBi. With the diodes dependence, the pattern can really deflect in opposite direction. The designed antenna has much advantages, such as low cost, wider band, compact and simple structure along with explicit application scenarios.
作者机构：
[Song, Yi-Yan; Wu, Xu-Cai; Li, Shu-Zong; Sun, Qingde; Zhang, Wei-Bing] Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha;410114, China;[Song, Yi-Yan; Wu, Xu-Cai; Li, Shu-Zong; Sun, Qingde; Zhang, Wei-Bing] 410114, China
通讯机构：
[Wei-Bing Zhang] H;Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology , Changsha 410114, People’s Republic of China
作者机构：
[Bao, Chenguang; Yang, Li] College of Materials Science and Engineering, Hunan University, Changsha 410082, China;[Zeng, Qing] Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, China;Authors to whom correspondence should be addressed.;[Li, Fujin] College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha 410114, China;[Wu, Wei; Shi, Lei] Hunan Zhongke Shinzoom Co., Ltd., Changsha 410118, China
通讯机构：
[Hongbo Liu; Yuxi Chen] C;College of Materials Science and Engineering, Hunan University, Changsha 410082, China<&wdkj&>Authors to whom correspondence should be addressed.
关键词：
Breakdown voltage (BV);Enhance bulk field (ENBULF);Figure of merit (FOM);High-K (HK);Highly doped N buried layer;SOI LDMOS;Specific on-resistance (R-on,R-sp)
摘要：
A novel high-K dielectric trench SOI LDMOS with an interface highly doped N buried layer (HKHN SOI LDMOS) is proposed. The devices are characterized with a high-K dielectric material (HK) introduced in the drift region and a high doping concentration of N existed below the HK trench (HKHN). First, the HK material causes assistant depletion in the N-drift region to increase doping concentration of the drift region (N (d)) and further improve the electric field (E-field) distribution. Second, the highly doped N buried layer below the interface of the HK trench can provide a low on-resistance passage and shorten the ionization integral path to enhance bulk field (ENBULF). Both the high drift region doping concentration and low on-resistance passage can reduce the specific on-resistance (R (on,sp)). Meanwhile, a higher breakdown voltage (BV) can be obtained by an optimized electric field distribution and a shortened ionization integration path. The new device can achieve high BV, low R (on,sp) and excellent figure of merit (FOM = BV (2)/R (on,sp)). The BV of the HKHN SOI LDMOS is 552 V with R (on,sp) of 29.46 m omega cm(2) and FOM of 10.343 MW cm(-2).
作者机构：
[Linman Du; Zhiming Deng; Youbin Li; Songjun Zeng; Fei Li] School of Physics and Electronics, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, and Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, Changsha 410081, P. R. China;[Youbin Li] School of Physics and Electronic Sciences, Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, P. R. China;[Linman Du; Zhiming Deng; Songjun Zeng; Fei Li] Institute of Interdisciplinary Studies, Hunan Normal University, Changsha 410081, P. R. China
摘要：
Upconversion nanoparticles (UCNPs) emerged as promising near-infrared (NIR) light-triggered nanotransducers for photodynamic therapy (PDT). However, the traditionally used 980 nm excitation source could cause an overheating effect on biological tissues, and the single photosensitizer (PS) loading could not efficiently utilize multiradiation UC luminescence, resulting in a limited efficiency of PDT in tumor tissues with hypoxia characteristics. Herein, 808 nm light-responsive Nd-sensitized UCNPs@mSiO(2)@MnO(2) core-shell NPs were designed as light nanotransducers with efficient UC emission at 550 and 650 nm for PDT and downshifting luminescence at 1525 nm for second NIR (NIR-II) imaging. UC emission was fully utilized by loading dual PSs, rose bengal (RB), and zinc phthalocyanine (ZnPc), thus significantly improving the reactive oxide species (ROS) generation efficiency. Moreover, a manganese dioxide (MnO(2)) shell with ultrasensitive biodegradability in an acidic tumor microenvironment (TME) can generate an amount of oxygen molecules, alleviating the symptoms of hypoxia and then improving the efficacy of PDT. Meanwhile, the biodegraded Mn(2+) ions can further strengthen T(1)-weighted magnetic resonance imaging (MRI). This work presented a new multifunctional theranostic agent for combining NIR-II/MRI imaging and 808 nm light-triggered PDT to combat the limitations of cancer therapy.
通讯机构：
[Fuliang Xiao; Qinghua Zhou] S;School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha, China<&wdkj&>Hunan Province Higher Education Key Laboratory of Modeling and Monitoring on the Near-Earth Electromagnetic Environments, Changsha University of Science and Technology, Changsha, China
摘要：
Recent studies have shown that auroral kilometric radiation (AKR) can propagate from the polar source cavity into the equatorial radiation belt but there is no direct evidence yet. By examining 19-month data from Arase satellite and Van Allen Probes, we report a unique event that distinct AKR emissions are observed simultaneously at high and low latitudes, with the peak wave spectra in the frequency 300–400 kHz. Using the three-dimensional ray tracing method, we simulate the AKR ray paths at three typical frequencies (220, 350, and 550 kHz), and show that more ray paths for 350 kHz can propagate downward through the locations of Arase satellite and Van Allen Probe B than those for other two frequencies. This result can successfully explain the observation and provides a direct evidence that AKR can propagate to low latitude radiation belt under suitable conditions.
A unique auroral kilometric radiation (AKR) event is reported simultaneously by Arase satellite and Van Allen Probes during 19-month observations
Simulations show that more AKR for 350 kHz pass the locations of two satellites, consistent with observations
AKR raypaths are highly dependent on wave frequency, initial wave normal angles and azimuthal angles
Auroral kilometric radiation (AKR) is a widely existing electromagnetic wave in the magnetosphere and has potential for acceleration or precipitation loss of energetic electrons, yielding serious damage to orbiting space systems or ozone destruction in the atmosphere. Previous observation and numerical simulation have shown that AKR originated from the polar cavity region can be presented in the low latitude even in the equator. However, there is no direct observational evidence yet due to lack of the correlated data at higher and lower latitudes. Here, we examine observations of Arase satellite and Van Allen Probes from 25 March 2017 to 30 October 2018, and find a unique AKR event detected simultaneously by the Arase satellite (at high latitude) and Probe B (at low latitude). Using 3-D ray tracing method, we simulate AKR paths for different frequencies (220, 350, and 550 kHz) with suitable wave normal angles and azimuthal angles. We show that more ray paths for 350 kHz can pass through the locations of Arase satellite and Probe B than those for other two frequencies, consistent with the observations. The current result provides a direct evidence that AKR can propagate to low latitude radiation belt under suitable conditions.
通讯机构：
[Lijuan Wu] H;Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, The School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha, China
摘要：
The analytical model and mechanism of a linear extended gate (LEG) for internal superjunction lateral double-diffused metal-oxide semiconductor (LEG-ISJ LDMOS) is developed in this paper. The LEG-ISJ structure features a LEG structure on the top of the device that connects two back-to-back diodes on the right. An accumulation layer with high electron density can be formed by the LEG to increase the drift region current density in the ON-state. Besides, the surface electric field of the LEG is modulated by semiconductor insulator semiconductor (SIS) structure in the OFF-state. Meanwhile, the superjunction below the drift region introduces a new current conduction path. The current of the LEG-ISJ is obtained by solving the Current density's equation. The simulation results are in good agreement with the analytical model. An extremely low specific ON-resistance (R-ON,R-sp) of 5.88 m omega center dot cm(2) and a high breakdown voltage (BV) of 416 V are realized. Therefore, an extremely high FOM = BV2/R-ON,R-sp of 29.43 MW/cm(2) is obtained for the LEG-ISJ LDMOS.
