期刊：
Journal of Alloys and Compounds,2021年862:158454 ISSN：0925-8388
通讯作者：
Gong, Li
作者机构：
[Chao, Zisheng; Fan, Jincheng; Fu, Hao; Zhang, Junsen; Wang, Cheng; Gong, Li] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.;[He, Haiping; Fang, Zhishan] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China.;[Zhou, Conghua] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China.;[Chen, Jianlin] Changsha Univ Sci & Technol, Sch Energy & Power Engn, Changsha 410114, Peoples R China.
通讯机构：
[Gong, Li] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.
关键词：
All-inorganic perovskite solar cells;CsPbI3;Hole-free;Carbon-based;Low temperature
摘要：
In this paper, hole-free, carbon-based all-inorganic CsPbI3 perovskite solar cells (PSCs) with the structure of F-doped SnO2 (FTO)/ZnO/CsPbI3/C are fabricated at a low temperature for the first time. Excess CsBr is added into CsPbI3 precursor solution to obtain stable black phase CsPbI3 at a low temperature (120 degrees C). ZnO is prepared by a spin-coating method at 120 degrees C. And then the C electrode is prepared by a doctor-blade method at 120 degrees C. The effect of different layers of ZnO on the performance of solar cells is investigated. The champion power conversion efficiency (PCE) of the solar cell based on 3 layers of ZnO is 10.95%, with a short-circuit current (Ad of 17.66 mA/cm(2), an open-circuit voltage (V-OC) of 0.91 V and a fill factor (FF) of 68%, which is the best performance for hole-free, carbon-based all-inorganic CsPbI3 PSCs fabricated at a low temperature, compared with the other reported results. The encapsulated device remained 91% of the initial PCE after being stored in a glove box for 5 months. For further application in flexible solar cells, the solar cells with the structure of PET/Sn-doped In2O3 (ITO)/ZnO/CsPbI3/C are fabricated under the best parameter conditions and the PCE of 8.70% is obtained. (C) 2020 Elsevier B.V. All rights reserved.
期刊：
Materials Science in Semiconductor Processing,2020年108:104870 ISSN：1369-8001
通讯作者：
Gong, Li
作者机构：
[Gong, Li; Duan, Jipeng; Wang, Cheng; Zhang, Junsen] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.;[Wu, Jie; Jiang, Liangxiang] Cent S Univ, Sch Met & Environm, Changsha 410083, Peoples R China.;[Zhou, Conghua; Xie, Haipeng] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China.;[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.;[He, Haiping; Fang, Zhishan; Lu, Jianguo; Lu, Bojing] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China.
通讯机构：
[Gong, Li] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.
关键词：
All-inorganic perovskite solar cells;CsPbIBr2;A two-step temperature-control process;Different first-step annealing temperature
摘要：
In this paper, all-inorganic CsPbIBr2 thin films were annealed by a two-step temperature-control process. All-inorganic, hole-transporting-layer-free, carbon-based planar perovskite solar cells (PSCs) with these CsPbIBr2 thin films (FTO/c-TiO2/CsPbIBr2/C) were fabricated. The effect of different first-step annealing temperatures during the two-step temperature-control process (50 degrees C/280 degrees C, 80 degrees C/280 degrees C, 100 degrees C/280 degrees C, 150 degrees C/280 degrees C, 180 degrees C/280 degrees C) on the photovoltaic conversion efficiency (PCE) of PSCs was investigated for the first time. When the first-step annealing temperature was 150 degrees C and the second-step annealing temperature was 280 degrees C, the highest efficiency of 8.31% was obtained. Without encapsulation, the solar cell could retain 97% of the initial PCE, when it was stored at 80 degrees C and zero humidity for 8 days. For comparison, solar cells with CsPbIBr2 films annealed by a one-step temperature-control process were fabricated. The highest PCE was 4.98%. From this, we could see that there is an increase of 66.9% in PCE, through using a two-step temperature-control annealing process. And also, in order to investigate why the PSCs by a two-step temperature-control annealing process has a higher PCE, all kinds of measurements were done for the first time. According to the results of the measurements, the perovskite film annealed by a two-step temperature-control process has a bigger crystal size, fewer grain boundaries, stronger PL and UV-vis absorption intensities, longer lifetime of minority carriers, less energy loss for hole transporting.
期刊：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2019年19(1):240-244 ISSN：1533-4880
通讯作者：
Gong, Li;Jiang, Liangxing
作者机构：
[Liu, Yunzhen; Gong, Li] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;[Liu, Fangyang; Gong, Li] Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China.;[Liu, Fangyang; Jiang, Liangxing] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
通讯机构：
[Gong, Li; Jiang, Liangxing] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China.;Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
关键词：
ZnO Transparent Conductive Film;Flexibility;Adhesion Force
摘要：
Flexible Ga doped ZnO (GZO) transparent conductive thin films were prepared on polycarbonate (PC) substrates at room temperature by magnetron sputtering. The adhesive property between the GZO film and the PC substrate was investigated quantitatively by the scratch test, which is designed for the quantitative assessment of the mechanical integrity of coated surfaces. The effect of the sputtering pressures on the adhesion forces for the GZO films was investigated. When the sputtering pressure varied from 0.2 to 0.5 Pa, no obvious adhesion force alteration was observed. However, when the sputtering pressure was increased to 0.7 Pa, the adhesion force was decreased. The lowest square resistance of the GZO film was 18.6 Omega/sq. Regardless of the sputtering pressure, the transmittance in the visible light was about 90%. When the sputtering pressure was 0.4 Pa, the optimal figure of merit (Phi(TC)) was 2.5 x 10(-2) Omega(-1), indicating that the optimal pressure was 0.4 Pa.
