Low-temperature preparation achieving 10.95%-efficiency of hole-free and carbon-based all-inorganic CsPbI3 perovskite solar cells
作者：
Zhang, Junsen;Wang, Cheng;Fu, Hao;Gong, Li* ;He, Haiping;...
期刊：
Journal of Alloys and Compounds ,2021年862:158454 ISSN：0925-8388
通讯作者：
Gong, Li
作者机构：
[Chao, Zisheng; Fan, Jincheng; Fu, Hao; Zhang, Junsen; Wang, Cheng; Gong, Li] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.;[He, Haiping; Fang, Zhishan] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China.;[Zhou, Conghua] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China.;[Chen, Jianlin] Changsha Univ Sci & Technol, Sch Energy & Power Engn, Changsha 410114, Peoples R China.
通讯机构：
[Gong, Li] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.
关键词：
Bromine compounds;Carbon;Cesium compounds;Conversion efficiency;Efficiency;II-VI semiconductors;Indium compounds;Open circuit voltage;Perovskite;Perovskite solar cells;Temperature;Zinc oxide;Different layers;Doctor blade method;Flexible solar cells;Low temperature preparation;Parameter conditions;Power conversion efficiencies;Precursor solutions;Spin-coating method;Lead compounds
摘要：
In this paper, hole-free, carbon-based all-inorganic CsPbI3 perovskite solar cells (PSCs) with the structure of F-doped SnO2 (FTO)/ZnO/CsPbI3/C are fabricated at a low temperature for the first time. Excess CsBr is added into CsPbI3 precursor solution to obtain stable black phase CsPbI3 at a low temperature (120 °C). ZnO is prepared by a spin-coating method at 120 °C. And then the C electrode is prepared by a doctor-blade method at 120 °C. The effect of different layers of ZnO on the performance of solar cells is investigated. The champion power conversion efficiency (PCE) of the solar cell based on 3 layers of ZnO is 10.95%, with a short-circuit current (JSC) of 17.66 mA/cm2, an open-circuit voltage (VOC) of 0.91 V and a fill factor (FF) of 68%, which is the best performance for hole-free, carbon-based all-inorganic CsPbI3 PSCs fabricated at a low temperature, compared with the other reported results. The encapsulated device remained 91% of the initial PCE after being stored in a glove box for 5 months. For further application in flexible solar cells, the solar cells with the structure of PET/Sn-doped In2O3 (ITO)/ZnO/CsPbI3/C are fabricated under the best parameter conditions and the PCE of 8.70% is obtained. © 2020 Elsevier B.V.
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英文
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All-inorganic, hole-transporting-layer-free, carbon-based CsPbIBr2 planar perovskite solar cells by a two-step temperature-control annealing process
作者：
Wang, Cheng;Zhang, Junsen;Duan, Jipeng;Gong, Li* ;Wu, Jie;...
期刊：
Materials Science in Semiconductor Processing ,2020年108:104870 ISSN：1369-8001
通讯作者：
Gong, Li
作者机构：
[Gong, Li; Duan, Jipeng; Wang, Cheng; Zhang, Junsen] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.;[Wu, Jie; Jiang, Liangxiang] Cent S Univ, Sch Met & Environm, Changsha 410083, Peoples R China.;[Zhou, Conghua; Xie, Haipeng] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China.;[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.;[He, Haiping; Fang, Zhishan; Lu, Jianguo; Lu, Bojing] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China.
通讯机构：
[Gong, Li] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Peoples R China.
关键词：
Annealing;Bromine compounds;Carbon;Carbon films;Energy dissipation;Grain boundaries;Hole mobility;Lead compounds;Perovskite;Perovskite solar cells;Photovoltaic effects;Process control;Temperature control;Thin films;Annealing process;Annealing temperatures;CsPbIBr2;Hole transporting;Hole transporting layers;Minority carrier;Perovskite films;Photovoltaic conversion;Solar control films
摘要：
In this paper, all-inorganic CsPbIBr2 thin films were annealed by a two-step temperature-control process. All-inorganic, hole-transporting-layer-free, carbon-based planar perovskite solar cells (PSCs) with these CsPbIBr2 thin films (FTO/c-TiO2/CsPbIBr2/C) were fabricated. The effect of different first-step annealing temperatures during the two-step temperature-control process (50 °C/280 °C, 80 °C/280 °C, 100 °C/280 °C, 150 °C/280 °C, 180 °C/280 °C) on the photovoltaic conversion efficiency (PCE) of PSCs was investigated for the first time. When the first-step annealing temperature was 150 °C and the second-step annealing temperature was 280 °C, the highest efficiency of 8.31% was obtained. Without encapsulation, the solar cell could retain 97% of the initial PCE, when it was stored at 80 °C and zero humidity for 8 days. For comparison, solar cells with CsPbIBr2 films annealed by a one-step temperature-control process were fabricated. The highest PCE was 4.98%. From this, we could see that there is an increase of 66.9% in PCE, through using a two-step temperature-control annealing process. And also, in order to investigate why the PSCs by a two-step temperature-control annealing process has a higher PCE, all kinds of measurements were done for the first time. According to the results of the measurements, the perovskite film annealed by a two-step temperature-control process has a bigger crystal size, fewer grain boundaries, stronger PL and UV–vis absorption intensities, longer lifetime of minority carriers, less energy loss for hole transporting. © 2019 Elsevier Ltd
语种：
英文
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Study on the Adhesion Force Between Ga-Doped ZnO Thin Films and Polymer Substrates
作者：
Gong, Li* ;Liu, Yunzhen;Liu, Fangyang;Jiang, Liangxing*
期刊：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,2019年19(1):240-244 ISSN：1533-4880
通讯作者：
Gong, Li;Jiang, Liangxing
作者机构：
[Liu, Yunzhen; Gong, Li] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;[Liu, Fangyang; Gong, Li] Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China.;[Liu, Fangyang; Jiang, Liangxing] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
通讯机构：
[Gong, Li; Jiang, Liangxing] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China.;Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
关键词：
ZnO Transparent Conductive Film;Flexibility;Adhesion Force
摘要：
Flexible Ga doped ZnO (GZO) transparent conductive thin films were prepared on polycarbonate (PC) substrates at room temperature by magnetron sputtering. The adhesive property between the GZO film and the PC substrate was investigated quantitatively by the scratch test, which is designed for the quantitative assessment of the mechanical integrity of coated surfaces. The effect of the sputtering pressures on the adhesion forces for the GZO films was investigated. When the sputtering pressure varied from 0.2 to 0.5 Pa, no obvious adhesion force alteration was observed. However, when the sputtering pressure was increased to 0.7 Pa, the adhesion force was decreased. The lowest square resistance of the GZO film was 18.6 Omega/sq. Regardless of the sputtering pressure, the transmittance in the visible light was about 90%. When the sputtering pressure was 0.4 Pa, the optimal figure of merit (Phi(TC)) was 2.5 x 10(-2) Omega(-1), indicating that the optimal pressure was 0.4 Pa.
语种：
英文
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Study on the adhesive mechanism between the Ga doped ZnO thin film and the polycarbonate substrate
作者：
Gong, Li;Liu, Yunzhen;Jiang, Liangxing;Liu, Fangyang*
期刊：
Materials Science in Semiconductor Processing ,2017年66:105-108 ISSN：1369-8001
通讯作者：
Liu, Fangyang
作者机构：
[Liu, Yunzhen; Gong, Li] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410004, Hunan, Peoples R China.;[Gong, Li] Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China.;[Liu, Fangyang; Jiang, Liangxing] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
通讯机构：
[Liu, Fangyang] C;Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
关键词：
Adhesion;Chemical bonds;Compressive stress;Conductive films;Depth profiling;Gallium;Gallium alloys;Optical properties;Optoelectronic devices;Polymer films;Polymers;Residual stresses;X ray photoelectron spectroscopy;Zinc oxide;Chemical bondings;Electrical and optical properties;Element diffusion;Flexible;Gadoped ZnO (GZO);Polycarbonate substrates;Polymer substrate;Transparent conductive films;Thin films
摘要：
The Ga doped ZnO (GZO) film was deposited on the polymer substrate at room temperature by magnetron sputtering. The resistivity is 8.9×10−4Ωcm. The average transmittance in the visible region is over 85%. According to the resistivity and transmittance in the visible light, it is obtained that the film exhibits excellent electrical and optical properties, which satisfies the application for optoelectronic devices. However, the adhesion between the film and the polymer substrate is very weak. In order to figure out the reason of the weak adhesion, we study the adhesive mechanism between the GZO film and the polymer substrate through using depth profiling XPS method, residual stress test, and SIMS method for the first time. The residual stress of the film is a compressive stress. According to the SIMS results, an element diffusion exists at the interface. However, according to the depth profiling XPS results, there is no chemical bonding between the GZO film and the polymer substrate. © 2017 Elsevier Ltd
语种：
英文
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Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates
作者：
Gong, Li* ;Liu, Yun-Zhen;Liu, Fang-Yang;Jiang, Liang-Xing*
期刊：
Journal of Materials Science: Materials in Electronics ,2017年28(8):6093-6098 ISSN：0957-4522
通讯作者：
Gong, Li;Jiang, Liang-Xing
作者机构：
[Gong, Li; Liu, Yun-Zhen] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;[Gong, Li] Changsha Univ Sci Sr Technol, Hunan Prov Engn Res Ctr, Elect Transportat & Smart Distribut Network, Changsha 410114, Hunan, Peoples R China.;[Jiang, Liang-Xing; Liu, Fang-Yang] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
通讯机构：
[Gong, Li; Jiang, Liang-Xing] C;Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China.;Changsha Univ Sci Sr Technol, Hunan Prov Engn Res Ctr, Elect Transportat & Smart Distribut Network, Changsha 410114, Hunan, Peoples R China.;Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
关键词：
Compressive stress;Deposition;Flow rate;Gallium;Gallium alloys;Magnetron sputtering;Polymer films;Sputtering;Thin films;Zinc oxide;Adhesive properties;Polymer substrate;rf-Magnetron sputtering;Room temperature deposition;Sputtering pressures;Transparent conductive;Transparent conductive films;Transparent conductive thin films;Conductive films
摘要：
Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9Ω/sq. is obtained at the Ar flow rate of 40sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40sccm. © 2017, Springer Science+Business Media New York.
语种：
英文
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Transparent conductive Ga-doped ZnO/Cu multilayers prepared on polymer substrates at room temperature
作者：
Gong, Li;Lu, Jianguo;Ye, Zhizhen*
期刊：
Solar Energy Materials and Solar Cells ,2011年95(7):1826-1830 ISSN：0927-0248
通讯作者：
Ye, Zhizhen
作者机构：
[Lu, Jianguo; Gong, Li; Ye, Zhizhen] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.;[Gong, Li] Changsha Univ Sci & Technol, Coll Mat Sci & Engn, Changsha 410015, Hunan, Peoples R China.
通讯机构：
[Ye, Zhizhen] Z;Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.
关键词：
Magnetron sputtering;Multilayer;Polycarbonate;Transparent conductive oxides;Zinc oxide
摘要：
In order to improve the transparency and durability of the Cu films deposited on polycarbonate (PC) substrates, a Ga-doped ZnO (GZO) layer could be deposited directly onto the Cu film. Compared with a single-layered GZO film, the GZO/Cu multilayer coatings have much lower sheet resistance and much thinner thickness. In our work, GZO/Cu multilayers were deposited by magnetron sputtering on PC substrates at room temperature. The structural, electrical, and optical properties of multilayers were investigated at various thicknesses of the Cu and GZO layers. As the Cu layer thickness increases, the resistivity decreases. As the GZO layer thickness increases, the resistivity increases. And we obtained that the transmittance of the GZO/Cu multilayer coatings was higher than that of the single Cu layer. The lowest resistivity of 5.7×10 <sup>-5</sup> Ωcm with a carrier concentration of 3.25×10 <sup>22</sup> cm<sup>-3</sup> was obtained at the optimum Cu (12 nm) and GZO (10 nm) layer thickness. The best figure of merit φ<inf>TC</inf> is 4.66×10<sup>-3</sup> Ω<sup>-1</sup> for the GZO(30 nm)/Cu(12 nm) multilayer. ©2011 Elsevier B.V. All rights reserved.
语种：
英文
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Transparent Conductive Al-Doped ZnO/Cu Bilayer Films Grown on Polymer Substrates at Room Temperature
作者：
Huang Ji-Jie;Wang Yu-Ping;Lu Jian-Guo* ;Gong Li;Ye Zhi-Zhen
期刊：
中国物理快报：英文版 ,2011年28(12):127306 ISSN：0256-307X
通讯作者：
Lu Jian-Guo
作者机构：
[Ye Zhi-Zhen; Wang Yu-Ping; Lu Jian-Guo; Huang Ji-Jie] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China.;[Gong Li] Changsha Univ Sci & Technol, Coll Mat Sci & Engn, Changsha 410015, Hunan, Peoples R China.
通讯机构：
[Lu Jian-Guo] Z;Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China.
关键词：
Polymer Substrates;Room Temperature
摘要：
Al-doped ZnO (AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature. The structural, electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer. The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 × 10-3ω-1, with a low sheet resistance of 12.38 /sq, an acceptable visible transmittance of 73%, and a high near-infrared reflectance of about 50%. © 2011 Chinese Physical Society and IOP Publishing Ltd.
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英文
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