作者机构：
FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.;SICHUAN INST TECHNOL,PHYS LAB,CHENGDU 611744,SICHUAN,PEOPLES R CHINA.;CHANGSHA ELECT POWER UNIV,DEPT PHYS,CHANGSHA 410077,HUNAN,PEOPLES R CHINA.;[Li, GB] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
通讯机构：
[Li, GB] F;FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
作者机构：
FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.;CHANGSHA ELECT POWER UNIV,DEPT PHYS,CHANGSHA 410077,HUNAN,PEOPLES R CHINA.;[Liao, LS] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
通讯机构：
[Liao, LS] F;FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA.
作者机构：
State Key Laboratory Surface Physics, Fudan-T. D. Lee Laboratory, Fudan University, Shanghai 200433, China;[Liu, Xiao-Bing; Li, Min-Qian; Liao, Liang-Sheng; Yuan, Shuai; Miao, Xi-Yue; Hou, Xiao-Yuan; He, Jun; Fan, Hong-Lei; Sun, Jie-Lin; Xu, Lei] Department of Physics, Changsha Electric Power University, Changsha 410077, China;Laboratory of Analysis Techniques, Shanghai Inst. of Nuclear Research, Academia Sinica, Shanghai 201800, China
通讯机构：
Department of Physics, Changsha Electric Power University, China
摘要：
AFM and PL are adopted to study the morphological and photoluminescent characteristics of a series of porous silicon (PS) samples etched with direct current and pulsed current. The results of AFM indicate that there are many "hillocks" at the surface of PS samples and the microstructure of PS samples is quite different with different etching modes. The amount of the small Si particles formed by pulsed etching is more than that by direct current etching under the equivalent etching conditions and the particles appear more protruding and sharper by the pulsed etching. Moreover, PL spectra shows that it is easier to get photoluminescent PS samples with higher intensity by using pulsed etching method. The microstructure of PS samples plays a very important role in the generation of photoluminescence of porous silicon.
作者机构：
State Key Laboratory Surface Physics, Fudan-T. D. Lee Laboratory, Fudan University, Shanghai 200433, China;[刘小兵; 李民乾; 廖良生; 袁帅; 缪熙月; 侯晓远; 何钧; 范洪雷; 孙洁林; 徐磊] Department of Physics, Changsha Electric Power University, Changsha 410077, China;Laboratory of Analysis Techniques, Shanghai Inst. of Nuclear Research, Academia Sinica, Shanghai 201800, China
通讯机构：
Department of Physics, Changsha Electric Power University, China
